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600V 54A
0.100
APT6010B2FLL APT6010B2FLL*
*G
APT6010LFLL APT6010LFLLG*
Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7
(R)
R
FREDFET
B2FLL
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
T-MAXTM
TO-264
LFLL
* Increased Power Dissipation * Easier To Drive * Popular T-MAXTM or TO-264 Package * FAST RECOVERY BODY DIODE
APT6010B2_LFLL
D G S
All Ratings: TC = 25C unless otherwise specified.
UNIT Volts Amps
600 54 216 30 40 690 5.52 -55 to 150 300 54 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.100 100 500 100 3 5
(VGS = 10V, ID = 27A)
Ohms A nA Volts
6-2006 050-7062 Rev D
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT6010B2_LFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 54A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 54A@ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 400V VGS = 15V ID = 54A, RG = 5 ID = 54A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
6710 1250 90 150 30 75 12 19 34 9 885 970 1150 1220
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
54 216 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -54A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -54A, di/dt = 100A/s) Reverse Recovery Charge (IS = -54A, di/dt = 100A/s) Peak Recovery Current (IS = -54A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
300 600 2.7 7.8 14 20
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.18 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.20
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 2.06mH, RG = 25, Peak IL = 54A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID54A di/dt 700A/s VR 600V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and inforation contained herein.
0.16
D = 0.9
0.7 0.12 0.5 0.08 0.3 0.04 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
6-2006
050-7062 Rev D
Z
JC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
140 120 100 80 60
APT6010B2FLL_LFLL
VGS=15 &10V 8V 7.5V
TJ ( C)
0.0271 Dissipated Power (Watts) 0.009 0.0202 0.293 0.0656
TC ( C)
0.859
ID, DRAIN CURRENT (AMPERES)
7V
ZEXT
6.5V 40 20 0 6V 5.5V
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 160 140
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
NORMALIZED TO V = 10V @ 27A
GS
1.30 1.20 1.10 1.00 0.90 0.80
120 100 80 60 40 20 0 TJ = +125C TJ = +25C
VGS=10V VGS=20V
TJ = -55C
0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
60
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
50
1.10
30
1.05
20
1.00
10
0.95
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I V
D
0 25
0.90 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 27A = 10V
GS
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7062 Rev D
6-2006
220 100
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000
APT6010B2FLL_LFLL
Ciss
ID, DRAIN CURRENT (AMPERES)
C, CAPACITANCE (pF)
100S 10 TC =+25C TJ =+150C SINGLE PULSE 1 1mS 10mS
1,000
Coss
100
Crss
1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 54A
VDS=120V 12 VDS=300V
IDR, REVERSE DRAIN CURRENT (AMPERES)
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100
10
TJ =+150C TJ =+25C 10
8
VDS=480V
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 120 100
td(on) and td(off) (ns)
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 140
V
DD G
= 400V
td(off)
120 100
tr and tf (ns)
R
= 5
T = 125C
J
L = 100H
80 60 40 20 0
V
DD G
= 400V
R
= 5
T = 125C
J
80 tf 60 tr 40
L = 100H
td(on) 20 0
10
50 60 70 80 90 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
20
30
40
50 60 70 80 90 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 5000
V I
DD
10
20
30
40
2500
= 400V
= 400V
R
= 5
D J
= 54A
L = 100H E ON includes diode reverse recovery
SWITCHING ENERGY (J)
2000
Eon and Eoff (J)
T = 125C
J
Eoff
4000
T = 125C L = 100H E ON includes diode reverse recovery
Eoff
1500
3000
1000 Eon 500
2000 Eon 1000
050-7062 Rev D
6-2006
0
50 60 70 80 90 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
10
20
30
40
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
APT6010B2_LFLL
90% 10% Gate Voltage T 125C J Gate Voltage TJ125C
td(off) td(on) tr
90% Drain Current 90% Drain Voltage
tf
5% Switching Energy 10% 5% Drain Voltage Switching Energy
10% 0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
e1 SAC: Tin, Silver, Copper
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
1.01 (.040) 1.40 (.055)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7062 Rev D
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)
6-2006
19.81 (.780) 20.32 (.800)
Gate Drain Source
Gate Drain Source

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